Cleaning Agent for Substrate and Cleaning Method

ABSTRACT

The present invention provides a cleaning agent for a substrate and a cleaning method thereof, which can effectively remove fine particles (particles) present on a surface of substrate or impurities derived from various kinds of metals (metallic impurities), without causing roughness surface of a substrate, in particular, a semiconductor substrate, and without causing corrosion or oxidation of metal wirings, in particular, copper wirings, provided on a surface of substrate, and can further remove at the same time a carbon defect present on a surface of substrate, without removing a metal corrosion inhibitor—Cu film, in particular, a Cu-BTA film. The present invention provides a cleaning agent for a substrate comprising [I] an organic acid having at least one carboxyl group and/or [II] a complexing agent, and [III] an organic solvent selected from the group consisting of (1) monohydric alcohols, (2) alkoxyalcohols, (3) glycols, (4) glycol ethers, (5) ketones and (6) nitriles, and a cleaning method for a surface of substrate, which comprises the surface of substrate is treated with said cleaning agent.

TECHNICAL FIELD

The present invention relates to a cleaning agent for a surface ofsubstrate, in particular, for a surface of semiconductor substrateprovided with copper wiring thereon, and to a cleaning method thereof.

BACKGROUND ART

Recently, with the spread of multilayer wirings on a surface ofsemiconductor substrate, a so-called chemical mechanical polishing (CMP)technique, by which a semiconductor substrate is mechanically polishedand planarized, has been used in producing devices.

In particular, accompanied to the tendency to a highly integrated LSI inrecent years, a wiring used has been changed from conventional aluminumto copper (Cu) which has a lower electric resistance, and thus the CMPtechnique (Cu-CMP) has become essential, when semiconductors having amultilayer structure, in which copper wirings are provided in manylayers on the surface thereof, are produced.

The CMP is a method for planarizing a surface of semiconductor substrateusing a slurry containing abrasive grains such as silica, aluminum andceria, and an object to be polished is silicon oxide films, wirings,plugs, or the like.

And the semiconductor surface after the CMP process is contaminated witha large amount of abrasive grain itself used, metals contained in theslurry, or metallic impurities derived from metallic wirings or metallicplug polished, and further various kinds of particles.

Contamination of the surface of semiconductor substrate with themetallic impurities or the particles affects electric characteristics ofthe semiconductor, and causes to lose reliability of devices. Further,since device is destructed when metallic contamination is significant,it is necessary to introduce a post-CMP cleaning process to removemetallic impurities or particles from the surface of semiconductorsubstrate.

Heretofore, various kinds of cleaning agents have been developed for usein various types of cleaning processes such as a cleaning processfollowing the CMP process, and provided for use.

On the other hand, since metallic copper on a surface of semiconductoris highly active, and easily corroded by a slight oxidizing power, ittends to cause an increase of wiring resistance or wire breaking.Therefore, it is known that corrosion of metallic copper on a surface ofsemiconductor can be prevented by adding various kinds of metalcorrosion inhibitors [for example, an aromatic type compound representedby benzotriazole(BTA)s and imidazoles, a cyclic compound such asmercaptoimidazole and mercaptothiazole, an aliphatic alcohol typecompound which has a mercapto group in a molecule and a carbon to whichsaid mercapto group is bonded and a carbon to which a hydroxyl group isbonded links adjacently such as mercaptoethanol and mercaptoglycerol].In particular, in a slurry used in the above-described Cu-CMP process,an inhibitor for metal corrosion as described above is added to preventthe polished metal surface from corrosion.

The metal corrosion inhibitor is supposed to be adsorbed on a surface ofmetal (for example, Cu) of semiconductor surface and form a metalcorrosion inhibiting film (for example, a metal corrosion inhibitor—Cufilm such as a Cu-BTA film), and thus to prevent corrosion of the metal(for example, Cu).

However, these metal corrosion inhibitors may remain on a surface ofsemiconductor as a so-called carbon defect.

There has been a problem that when a semiconductor having a carbondefect remaining on a surface thereof is subjected to heat treatment inthe subsequent process, during working of a device or the like, thecarbon defect is burnt to oxidize a wiring material resulting indeterioration of the device performance, or an apprehension thatmultilayer wiring executed without removing the carbon defect tends toput the flatness of upper layer part into disorder, and make a correctlamination difficult to cause a serious defect in working of the device.

However, a cleaning agent, which is conventionally used in variouscleaning processes such as a post-CMP cleaning process, cannotsufficiently remove the carbon defect, or apt to remove a metalcorrosion inhibiting film that is needed to prevent corrosion of metalsurface as described above. Thus, an effective means has not been foundwhich can remove only the carbon defect while maintaining the metalcorrosion inhibiting effect, without removing a metal corrosioninhibitor—Cu film, in particular, a Cu-BTA film as described above.

Patent Reference 1: JP-A-4-130100 (claims 1 to 3)

Patent Reference 2:

JP-A-7-79061 (claim 1)

Patent Reference 3:

JP-A-10-72594

Patent Reference 4: JP-A-10-26832 (claims 1 to 15)

Patent Reference 5: JP-A-11-316464 (claims 1 to 6)

Patent Reference 6: JP-A-2002-20787 (claims 1 to 36)

Patent Reference 7: JP-A-2003-13266 (claims 1 to 42)

DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention

The present invention has been made under such circumstances asdescribed above, and provides a cleaning agent for a substrate and acleaning method thereof, which can effectively remove fine particles(particles) present on a surface of substrate or impurities (metallicimpurities) derived from various kinds of metals, without causingroughness surface of a substrate, in particular, a semiconductorsubstrate, and without causing corrosion or oxidation of metal wirings,in particular, copper wirings, provided on a surface of substrate, andfurther can remove at the same time the carbon defect present on asurface of substrate, without removing a metal corrosion inhibitor—Cufilm, in particular, a Cu-BTA film.

MEANS TO SOLVE THE PROBLEMS

The present invention consists of the following items:

(1) a cleaning agent for a substrate comprising [I] an organic acidhaving at least one carboxyl group and/or [II] a complexing agent, and[III] an organic solvent selected from the group consisting of (1)monohydric alcohols, (2) alkoxyalcohols, (3) glycols, (4) glycol ethers,(5) ketones and (6) nitriles; and

(2) a cleaning method for a substrate surface, which comprises treatingthe substrate surface with said cleaning agent according to the aboveitem (1).

Namely, the present inventors have, after intensively studying a way toachieve the above-described object, found that not only particles andmetallic impurities on a surface of substrate can be removed withoutcausing roughness surface of a semiconductor substrate or corrosion oroxidation of metal wirings, in particular, cupper wirings provided on asemiconductor substrate, but also a carbon defect remaining on asubstrate surface can also be easily removed at the same time withoutlosing a metal corrosion inhibitor—Cu film, in particular, a Cu-BTAfilm, by cleaning the substrate surface using a cleaning agent forsubstrate comprising [I] an organic acid having at least one carboxylgroup and/or [II] a complexing agent and [III] a specified organicsolvent, in particular, a cleaning agent for substrate comprising [I] anorganic acid having at least one carboxyl group, [II] a complexing agentand [III] a specified organic solvent, and further that specifiedsolvents, among organic solvents, are superior in exhibiting such aneffect, and a combined use of the specified organic solvents and acompound having at least one phosphonic acid group in a molecule (aphosphonic acid type complexing agent) as a complexing agent isparticularly preferable, and accomplished the present invention.

The reason why the above-described object can be achieved by the presentinvention is not sure, but is supposed as follows. For instance, acarbon defect becomes unstable in the optimum pH range generated by anorganic acid and is hence dissolved in an organic solvent. On the otherhand, a metal corrosion inhibiting film (for example, a metal corrosioninhibitor—Cu film such as a Cu-BTA film) is not dissolved in an organicsolvent or water in the above pH range, and thus a dissolution selectionratio of the carbon defect and the metal corrosion inhibiting film (forexample, a Cu-BTA film) is increased, and only the carbon defect can beremoved without removing the metal corrosion inhibiting film (inparticular, a Cu-BTA film) while the metal corrosion inhibiting effectis maintained.

The organic solvent according to the present invention is water-soluble,but all of water-soluble organic solvents cannot necessarily be used.Those which can satisfy the object of the present invention include, forexample, monohydric alcohols such as saturated aliphatic monohydricalcohols having 1 to 10 carbon atoms, preferably 1 to 8 carbon atoms,and more preferably 1 to 5 carbon atoms, unsaturated aliphaticmonohydric alcohols having 2 to 12 carbon atoms, preferably 2 to 10carbon atoms, and more preferably 2 to 6 carbon atoms; alkoxyalcoholshaving 3 to 20 carbon atoms, preferably 3 to 16 carbon atoms, and morepreferably 3 to 10 carbon atoms; glycols having 2 to 40 carbon atoms,preferably 2 to 20 carbon atoms, and more preferably 2 to 16 carbonatoms; glycol ethers having 3 to 40 carbon atoms, preferably 3 to 30carbon atoms, and more preferably 3 to 20 carbon atoms; ketones having 3to 40 carbon atoms, preferably 3 to 30 carbon atoms, and more preferably3 to 10 carbon atoms; nitrites such as simple nitrites having 2 to 10carbon atoms, preferably 2 to 8 carbon atoms, and more preferably 2 to 4carbon atoms, x-aminonitriles having 4 to 20 carbon atoms, preferably 4to 15 carbon atoms, and more preferably 4 to 10 carbon atoms,α-hydroxynitriles having 4 to 20 carbon atoms, preferably 4 to 15 carbonatoms, and more preferably 4 to 10 carbon atoms, β-aminonitriles having4 to 20 carbon atoms, preferably 4 to 15 carbon atoms, and morepreferably 4 to 10 carbon atoms, dinitriles having 4 to 20 carbon atoms,preferably 4 to 15 carbon atoms, and more preferably 4 to 10 carbonatoms, α-unsaturated nitrites having 5 to 30 carbon atoms, preferably 5to 20 carbon atoms, and more preferably 5 to 18 carbon atoms, α-benzenenitrites having 8 to 30 carbon atoms, preferably 8 to 20 carbon atoms,and more preferably 8 to 15 carbon atoms, and heterocyclic nitriteshaving 5 to 30 carbon atoms, preferably 5 to 20 carbon atoms, and morepreferably 5 to 15 carbon atoms.

Specific examples are as follows. Monohydric alcohols include, forexample, saturated aliphatic monohydric alcohols such as methanol,ethanol, n-propylalcohol, isopropylalcohol, 1-butanol, 2-butapanol,isobutylalcohol, tert-butylalcohol, 1-pentanol, 2-pentanol, 3-pentanol,2-methyl-1-butanol, isopentylalcohol, sec-butylalcohol,tert-pentylalcohol, 3-methyl-2-butanol, neopentylalcohol, 1-hexanol,2-methyl-1-pentanol, 4-methyl-2-pentanol, 2-ethyl-1-butanol, 1-heptanol,2-heptanol, 3-heptanol, 1-octanol, 2-octanol, 2-ethyl-1-hexanol,1-nonanol, 3,5,5-trimethyl-1-hexanol, 1-decanol, 1-undecanol,1-dodecanol, cyclohexanol, 1-methylcyclohexanol, 2-methylcyclohexanol,3-methylcyclohexanol, 4-methylcyclohexanol, 2-ethylhexyl alcohol, caprylalcohol, nonyl alcohol, decyl alcohol, undecyl alcohol, lauryl alcohol,tridecyl alcohol, myristyl alcohol, pentadecyl alcohol, cetyl alcohol,isocetyl alcohol, hexadecyl alcohol, heptadecyl alcohol, stearylalcohol, oleyl alcohol, octyldodecyl alcohol, nonadecyl alcohol, eicosylalcohol, ceryl alcohol, melissyl alcohol, α-terpineol, abietinol andfusel oil; unsaturated aliphatic monohydric alcohols such as allylalcohol, propargyl alcohol, benzyl alcohol, methallyl alcohol, 2- or3-butenyl alcohol, 2-pentenyl alcohol, furfuryl alcohol andtetrahydrofurfuryl alcohol.

Alkoxyalcohols include, for example, 2-methoxyethanol, 2-ethoxyethanol,2-(2-methoxy)ethoxyethanol, 2-(2-butoxyethoxy)ethanol, 2-propoxyethanol,2-butoxyethanol, 3-methoxy-3-methyl-1-butanol,2-(methoxymethoxy)ethanol, 2-isopropoxyethanol, 2-butoxyethanol and2-isopentyloxyethanol. Glycols include, for example, ethylene glycol,propylene glycol, butylene glycol, hexylene glycol, diethylene glycol,dipropylene glycol, trimethylene glycol, triethylene glycol,tetraethylene glycol, polyethylene glycol, polypropylene andtetraethylene glycol.

Glycol ethers include, for example, ethylene glycol monomethyl ether,ethylene glycol monoethyl ether, ethylene glycol mono n-propyl ether,ethylene glycol mono n-butyl ether, ethylene glycol dimethyl ether,ethylene glycol diethyl ether, diethylene glycol monomethyl ether,diethylene glycol monoethyl ether, diethylene glycol monobutylether,diethylene glycol monohexyl ether, diethylene glycol dimethyl ether,diethylene glycol diethyl ether, triethylene glycol monomethyl ether,triethylene glycol monoethyl ether, 1-methoxy-2-propanol,1-ethoxy-2-propanol, propylene glycol monoethyl ether, dipropyleneglycol monomethyl ether, dipropylene glycol monoethyl ether,tripropylene glycol monomethyl ether, polyethylene glycol monomethylether and 3-methoxy-3-methyl-1-butanol.

Ketones include, for example, acetone, methyl ethyl ketone, 2-pentanone,3-pentanone, 2-hexanone, cyclohexanone, methyl isobutyl ketone,2-heptanone, 4-heptanone, diisobutyl ketone, acetyl acetone,mesityloxide, phorone, isophorone, cyclohexanone, methylcyclohexanone,acetophenone, camphor, cyclopentanone and hexafluoroacetylacetone.

Nitriles include, for example, simple nitriles such as acetonitrile,propionitrile, n-butyronitrile and isobutyronitrile; α-aminonitrilessuch as α-aminopropionitrile, α-aminomethylthiobutyronitrile,α-aminobutyronitrile and aminoacetonitrile; α-hydroxylnitriles such aslactonitrile, hydroxyacetonitrile andα-hydroxy-γ-methylthiobutyronitrile; β-aminonitriles such asamino-3-propionitrile; dinitriles such as malononitrile, succinonitrileand adiponitrile; α-unsaturated nitrites such as acrylonitrile andmethacrylonitrile; α-benzenenitriles such as homoveratrinitrile andbenzonitrile; heterocyclic nitrites such as nicotinonitrile andisonicotinonitrile.

Among these, saturated aliphatic monohydric alcohols, alkoxyalcohols,glycols, glycol ethers, and simple nitrites are preferable, and further,methanol, ethanol, isopropyl alcohol, 2-methoxyethanol,2-(2-butoxyethoxy)ethanol, ethylene glycol, diethylene glycol monomethylether, acetone and acetonitrile are more preferable, because thesecompounds have a superior ability for removing the carbon defect.

The organic solvent according to the present invention may be used aloneor in combination of two or more kinds.

The organic solvent according to the present invention is contained toremove a carbon defect which remains on a surface of substrate, inparticular, a surface of semiconductor substrate with metal wirings ofCu or the like provided thereon, which has been treated with a slurrycontaining a metal corrosion inhibitor in a CMP treatment or the like.

The organic solvent according to the present invention can remove acarbon defect without removing a metal corrosion inhibiting film (forexample, a metal corrosion inhibitor—Cu film such as a Cu-BTA film)which has been formed on a surface of semiconductor substrate, and alsocan remove a carbon defect without dissolving, corroding, oxidizing ordecomposing apparatus components relating to device production such assemiconductor materials, wiring materials and plug materials.

The carbon defect is derived from slurry additives added to a slurry,for example, aromatic compounds such as a metal corrosion inhibitor [forexample, BTAs and benzimidazoles (JP-A-7-79061 or the like)], inparticular, from BTAs such as BTA or BTA derivatives. BTA or BTAderivatives include, for example, benzotriazole, loweralkylbenzotriazoles such as 4- or 5-methylbenzotriazole, 4- or5-ethylbenzotriazole, 4- or 5-propylbenzotriazole, 4- or5-isopropylbenzotriazole, 4- or 5-n-butylbenzotriazole, 4- or5-isobutylbenzotriazole, 4- or 5-pentylbenzotriazole, 4- or5-hexylbenzotriazole; 5-methoxybenzotriazole, 1-hydroxybenzotriazole,5-hydroxybenzotriazole, dihydroxypropylbenzotriazole,carboxybenzotriazole, 2,3-dicarboxypropylbenzotriazole,1-[N,N-bis(2-ethylhexyl)aminomethyl]benzotriazole, 1-[maleicacid]benzotriazole, 1-(substitited aminomethyl)-tolyltriazole (TradeName: IRGAMET 42, from Ciba-Geigy Aktiengesellshaft),[1,2,3-benzotriazole-1-methyl], [1,2,4-triazole-1-methyl],[2-ethylhexyl]amine, bis[(1-benzotriazole)methyl]sulfonic acid,3-amino-1,2,4-triazole, 4- or 5-chlorobenzotriazole, 4- or5-nitrobenzotriazole, benzotriazole monoethanolamine salt, benzotriazolediethylamine salt, benzotriazole cyclohexylamine salt, benzotriazolemorpholine salt, benzotriazole isopropylamine salt, methylbenzotriazolecyclohexylamine salt, o-tolyltriazole, m-tolylbenzotriazole andp-tolyltriazole.

It is supposed that the carbon defect is formed by these slurryadditives (for example, BTAs) which, for example, melt by a pressure orthe like in a CMP process then solidify by cooling on a metal corrosioninhibiting film (for example, a Cu-BTA film) formed on a semiconductorsubstrate with metal wiring such as of Cu and Ag provided thereon.

The complexing agent according to the present invention is notparticularly limited so long as it forms a complex with metallicimpurities, and includes, for example, a compound having at least onecarboxyl group in a molecule, a compound having at least one phosphonicacid group in a molecule, N-substituted amino acids, condensedphosphoric acids, and ammonium salts or alkali metal salts thereof.

The compound having at least one carboxyl group in a molecule ispreferably a nitrogen-containing polycarboxylic acid having 1 to 4nitrogen atoms And 9 to 6 carboxyl groups in a molecule, andspecifically includes, for example, alkylimimo polycarboxylic acidswhich may have a hydroxyl group such as hydroxyethyliminodiacetic acid[HIDA] and iminodiacetic acid [IDA]; nitrilopolycarboxylic acids such asnitrilotriacetic acid [NTA] and nitrilotripropionic acid [NTP]; mono- orpolyalkylene polyamine polycarboxylic acids which may have ahydroxyalkyl group, a hydroxyaryl group or a hydroxyaralkyl group suchas ethylendiamine tetraacetic acid [EDTA], ethylendiamine diacetic acid[EDDA], ethylendiamine dipropionic acid dihydrochloric acid [EDDP],hydroxyethylethylenediamine triacetic acid [EDTA-OH],1,6-hexamethylenediamine-N,N,N′,N′-tetraacetic acid [HDTA],triethylenetetramine hexaacetic acid [TTHA],diethylenetriamine-N,N,N′,N″,N″-pentaacetic acid [DTPA] andN,N-bis(2-hydroxybenzyl)ethylenediamine-N,N-diacetic acid [HBED];polyaminoalkane polycarboxylic acids such as diaminopropane tetraaceticacid [Methyl-EDTA] andtrans-1,2-diaminocyclohexane-N,N,N′,N′-tetraacetic acid [CyDTA];polyaminoalkanol polycarboxylic acids such as diaminopropanoltetraacetic acid [DPTA-OH]; and hydroxyalkylether polyaminepolycarboxylic acids such as glycolether diamine tetraacetic acid[GEDTA].

The compound having at least one phosphonic acid group in a moleculeincludes, for example, a nitorogen-containing polyphosphonic acid having1 to 6 nitrogen atoms and 1 to 8 phosphonic acid groups in a moleculesuch as alkylaiminopoly(alkylphosphonic acid), mono- orpolyalkylenepolyamine poly(alkylphosphonic acid) andnitrilopoly(alkylphosphonic acid); arylphosphonic acid;alkylenepolyphosphonic acid; and alkanepolyphosphonic acid which mayhave a hydroxyl group.

The compound having at least one phosphonic acid group is morepreferably a compound represented by the following general formula [1],[2] or [4]:

(wherein, X represents a hydrogen atom or a hydroxyl group, and R¹represents a hydrogen atom or an alkyl group);

(wherein, Q represents a hydrogen atom, or —R³—PO₃H₂ group, R² and R³represent each independently an alkylene group, and Y represents ahydrogen atom, —R³—PO₃H₂ group or a group represented by the followinggeneral formula [3]):

(wherein, Q and R³ are same to the above);

(wherein, R⁴ and R⁵ represent each independently a lower alkylene group,n represents an integer of 1 to 4, Z¹ to Z⁴ and at least 4 of n×Z⁵represent an alkyl group having a phosphonic acid group, and the restrepresents an alkyl group.)

In the general formula [1], the alkyl group represented by R¹ ispreferably a straight chained or a branched one having 1 to 10 carbonatoms, and includes, for example, a methyl group, an ethyl group, an-propyl group, an isopropyl group, a n-butyl group, an isobutyl group,a tert-butyl group, a sec-butyl group, a n-pentyl group, an isopentylgroup, a tert-pentyl group, a 1-methylpentyl group, a n-hexyl group, anisohexyl group, a heptyl group, an octyl group, a nonyl group and adecyl group.

In the general formulae [2] and [3], each of the alkylene groupsrepresented by R¹ and R² is preferably a straight chained or a branchedone having 1 to 10 carbon atoms, and includes, for example, a methylenegroup, an ethylene group, a propylene group, a methylethylene group, anethylmethylene group, a butylene group, a 2-methylpropylene group, anethylethylene group, a pentylene group, a 2,2-dimethylpropylene group, a2-ethylpropylene group, a hexylene group, a heptylene group, an octylenegroup, a 2-ethylhexylene group, a nonylene group and a decylene group.

In the general formula [4], the lower alkylene group represented by R⁴or R⁵ is preferably a straight chained or a branched one having 1 to 4carbon atoms, and specifically includes, for example, a methylene group,an ethylene group, a propylene group, a methylmethylene group, amethylethylene group, an ethylmethylene group, a butylene group, amethylpropylene group and an ethylethylene group.

Further, in the general formula [4], the alkyl group and the alkyl groupof the alkyl group having a phosphonic acid group represented by Z¹ toZ⁵ is preferably a straight chained or a branched one having 1 to 4carbon atoms, and includes, for example, a methyl group, an ethyl group,a n-propyl group, an isopropyl group, a n-butyl group, an isobutylgroup, a sec-butyl group and a tert-butyl group. The number ofphosphonic acid group in these alkyl groups is generally 1 to 2, andpreferably 2.

Among them, a compound in which all of Z¹ to Z⁴ and n×Z⁵ are alkylgroups having a phosphonic acid group in the above general formula [4]is preferable, due to a high ability to form a complex with metallicimpurities. Further, n in the above general formula [4] is preferably aninteger of 1 to 2, from the viewpoint of easiness in production.

Specific examples of the compound having at least one phosphonic acidgroup in a molecule to be used in the present invention include, forexample, alkylaminopoly(alkylphosphonic acid) such asethylaminobis(methylenephosphonic acid) anddodecylaminobis(methylenephosphonic acid); mono- orpolyalkylenepolyamine poly(alkylphosphonic acid) such asethylenediaminebis(methylenephosphonic acid) [EDDPO], ethylenediaminetetrakis(ethylenephosphonic acid), ethylenediaminetetrakis(methylenephosphonic acid) [EDTPO], hexamethylenediaminetetrakis(methylenephosphonic acid), isopropylenediaminebis(methylenephosphonic acid),isopropylenediaminetetra(methylenephosphonic acid), propanediaminetetra(ethylenephosphonic acid) [PDTMP],diaminopropanetetra(methylenephosphonic acid) [PDTPO],diethylenetriamine penta(ethylenephosphonic acid) [DEPPO],diethylenetriamine penta(methylenephosphonic acid) [DETPPO],triethylenetetramine hexa(ethylenephosphonic acid) [TETHP] andtriethylenetetramine hexa(methylenephosphonic acid) [TTHPO];nitrilopoly(alkylphosphonic acid) such asnitrilotris(methylenephosphonic acid) [NTPO]; arylphosphonic acids suchas phenylphosphonic acid; alkylenepolyphosphonic acids such asalkylenediphosphonic acid and (for example, methylenediphosphonic acid);alkanepolyphosphonic acid such as alkanediphosphonic acids which mayhave a hydroxyl group (for example, ethylidenediphosphonic acid, 1hydroxyethylidene-1,1′-diphosphonic acid [HEDPO],1-hydroxypropylidene-1,1′-diphosphonic acid and1-hydroxybutylidene-1,1′-diphosphonic acid).

The N-substituted amines include, for example, dihydroxyethylglycin[DHEG] and N-acetylglycin, and the condensated phosphoric acids include,for example, tripolyphosphoric acid and hexametaphosphoric acid.

Among the complexing agents according to the present invention asdescribed above, a compound having at least one phosphonic acid group ina molecule is preferable. Among those compounds, nitrogen-containingpolyphosphonic acids having 1 to 6 nitrogen atoms and 1 to 8 phosphonicacid groups in a molecule are more preferable and an alkanepolyphosphonic acid which may have a hydroxyl group are more preferable,and a mono- or polyalkylenepolyamine poly(alkylphosphonic acid), anitrilopoly(alkylphosphonic acid) and an alkane polyphosphonic acidwhich may have a hydroxyl group are perticularly preferable, because ofsuperior solubility in water and complexation coefficients and the like.

Further, among the compounds represented by the above general formulae[1], [2] and [4], a compound represented by the general formula [2] anda compound represented by the general formula [4] are preferable, and acompound represented by the general formula [4] is particularlypreferable.

More specifically, preferable examples of the complexing agent includeethylenediamine bis(methylenephosphonic acid) [EDDPO], ethylenediaminetetrakis(ethylenephosphonic acid), ethylenediaminetetrakis(methylenephosphonic acid) [EDTPO], hexamethylenediaminetetrakis(methylenephosphonic acid), isopropylenediaminebis(methylenephosphonic acid), isopropylenediaminetetra(methylenephosphonic acid), propanediamine tetra(ethylenephosphonicacid) [PDTMP], diaminopropane tetra(methylenephosphonic acid) [PDTPO],diethylenetriamine penta(ethylenephosphonic acid) [DEPPO],diethylenetriamine penta(methylenephosphonic acid) [DETPPO],triethylenetetramine hexa (ethylenephosphonic acid) [TETHP],triethylenetetramine hexa(methylenephosphonic acid) (TTHPO),nitrilotris(methylenephosphonic acid) [NTPO], ethylidenediphosphonicacid, 1-hydroxyethylidene-1,1′-diphosphonic acid [HEDPO],1-hydroxypropylidene-1,1′-diphosphonic acid and1-hydroxybutylidene-1,1′-diphosphonic acid.

The complexing agent according to the present invention may be usedalone or in combination of two or more kinds.

The complexing agent according to the present invention is contained tocapture and remove metallic impurities which are adhered to and remainon a surface of substrate, in particular, a surface of semiconductorsubstrate with metallic wiring provided thereon, which has beensubjected to a polishing treatment, an etching treatment, a CMPtreatment or the like. Metallic impurities include, for example, thosederived from a transition metal such as iron (Fe), nickel (Ni) andcopper (Cu); and an alkali earth metal such as calcium (Ca) andmagnesium (Mg), and are, for example, these metals themselves,hydroxides thereof or oxides thereof. The complexing agents according tothe present invention can remove the metallic impurities by forming astable complex ion with these metals.

The organic acid according to the present invention is an organic acidhaving at least one, preferably 1 to 3, and more preferably 2 to 3carboxyl groups, and further may have 1 to 3 hydroxyl groups and/or 1 to3 amino groups.

Specific examples of the organic acid according to the present inventioninclude, for example, monocarboxylic acids such as formic acid, aceticacid, propionic acid, butyric acid, n-valeric acid, 1-methylbutyricacid, 2-methylbutyric acid, caproic acid, enanthic acid, caprylic acid,trans-2-methyl-2-pentenoic acid, phenylacetic acid, 3-phenylvalericacid, 4-phenylvaleric acid, benzoic acid, ω-cyclohexylbutyric acid,α-naphthaleneacetic acid and diphenylacetic acid; dicarboxylic acidssuch as oxalic acid, malonic acid, succinic acid, glutaric acid, adipicacid, pimelic acid, maleic acid, fumaric acid, phthalic acid, subericacid, 2-n-butylmalonic acid, citraconic acid, mesaconic acid,isophthalic acid and terephthalic acid; tricarboxylic acids such astrimellitic acid, tricarbarylic acid and benzenetricarboxylic acid;oxycarboxylic acids such as oxymonocarboxylic acid [for example,hydroxyacetic acid, hydroxybutyric acid, lactic acid and salicylicacid], oxydicarboxylic acids [for example, malic acid, tartaric acid andtartronic acid], oxytricarboxylic acids [for example, citric acid]; andaminocarboxylic acids such as aspartic acid and glutamic acid.

Among the above organic acids, dicarboxylic acids and oxydicarboxylicacids are preferable.

Further, among the oxycarboxylic acids, oxydicarboxylic acids andoxytricarboxylic acids are more preferable.

More specifically, oxalic acid, malonic acid, fumaric acid, malic acid,tartaric acid and citric acid are particularly preferable.

The organic acid according to the present invention may be used alone orin combination of two or more kinds.

It is supposed that the organic acid according to the present inventiondissolves a metal oxide or a metal hydroxide of Fe or Al thoughslightly, and formation of a metal complex between a metal ion generatedby dissolution and a complexing agent results in a shift of theequilibrium towards more metal dissolution, improving dissolving powerof the organic acid for metal, and thus enabling to remove a metaladsorbed on or adhered to a surface of substrate.

The cleaning agent for a substrate of the present invention (hereinafterabbreviated as “a cleaning agent of the present invention”) contains anorganic acid and/or a complexing agent and an organic solvent accordingto the present invention, in particular, the cleaning agent containingall of three components of an organic acid, a complexing agent and anorganic solvent is preferable. Further, the cleaning agent of thepresent invention is usually in a state of solution, preferably anaqueous solution, and prepared by dissolving the organic acid and/or thecomplexing agent and the organic solvent according to the presentinvention as described above in water.

When concentration of the organic solvent according to the presentinvention to be used is too low, the carbon defect cannot besufficiently removed. On the contrary, too much amount of the organicsolvent according to the present invention to be used disturbscomplexing agent, organic acid, surfactant or the like to exhibitperformances described above sufficiently, causing a problem that theremoval effect for metal impurities or particles is lowered, and is notpreferable from the viewpoint of cost.

Further, when concentration of the organic acid according to the presentinvention or the complexing agent according to the present invention tobe used is too low, the cleaning effect becomes insufficient, andsometimes very weak in the case when a surface of substrate isunexpectedly heavily contaminated. On the other hand, a too highconcentration of the organic acid according to the present invention tobe used does not influence the cleaning effect, but is not preferablefrom the viewpoint of cost. Further, a too high concentration of thecomplexing agent according to the present invention to be used does notinfluence the cleaning effect, but leads to a harmful carboncontamination on a surface of semiconductor substrate, which causes aproblem in electric characteristics, and is not preferable from theviewpoint of cost.

Usually, the organic acid according to the present invention is used ina concentration range so that a ratio of the organic acid to the totalamount of the cleaning agent becomes, in the lower limit, usually notlower than 0.05% by weight, preferably not lower than 0.025% by weight,more preferably not lower than 0.5% by weight, further more preferablynot lower than 1% by weight, and in the upper limit, usually not higherthan 50% by weight, preferably not higher than 40% by weight, morepreferably not higher than 30% by weight, further more preferably nothigher than 10% by weight.

The complexing agent according to the present invention is used in aconcentration range so that a ratio of the complexing agent to the totalamount of the cleaning agent becomes, in the lower limit, usually notlower than 0.01% by weight, preferably not lower than 0.025% by weight,more preferably not lower than 0.05% by weight, further more preferablynot lower than 0.1% by weight, and in the upper limit, usually nothigher than 30% by weight, preferably not higher than 10% by weight,more preferably not higher than 5% by weight, further more preferablynot higher than 1% by weight.

The organic solvent according to the present invention is used in aconcentration range so that a ratio of the organic solvent to the totalamount of the cleaning agent becomes, in the lower limit, usually notlower than 0.05% by weight, preferably not lower than 0.1% by weight,more preferably not lower than 0.5% by weight, further more preferablynot lower than 1% by weight, and in the upper limit, usually not higherthan 50% by weight, preferably not higher than 40% by weight, morepreferably not higher than 20% by weight, further more preferably nothigher than 10% by weight.

A method for dissolving the organic acid and/or the complexing agent andthe organic solvent according to the present invention in water is notparticularly limited so long as a solution finally containing thesecomponents can be prepared.

Specifically, the method includes, for example, (1) a method of directlyadding the organic acid and/or the complexing agent and the organicsolvent according to the present invention to water, and dissolving themby stirring, (2) a method of mixing a solution containing the organicacid and/or a solution containing the complexing agent according to thepresent invention and a solution containing the organic solventaccording to the present invention, each prepared by separatelydissolving the organic acid and/or the complexing agent according to thepresent invention and the organic solvent according to the presentinvention in water, or if necessary, (3) a method of mixing a solutioncontaining the organic acid and the complexing agent each according tothe present invention prepared by directly adding the organic acid andthe complexing agent each according to the present invention to waterand dissolving by stirring, with a solution containing the organicsolvent according to the present invention prepared by separatelydissolving the organic solvent in water, (4) a method of mixing asolution containing the organic solvent and the complexing agent eachaccording to the present invention prepared by directly adding theorganic solvent and the complexing agent each according to the presentinvention to water and dissolving by stirring, with a solutioncontaining the organic acid according to the present invention preparedby separately dissolving the organic acid in water, and (5) a method ofmixing a solution containing the organic acid and the organic solventeach according to the present invention prepared by directly adding theorganic acid and the organic solvent each according to the presentinvention to water and dissolving by stirring, with a solutioncontaining the complexing agent according to the present inventionprepared by separately dissolving the complexing agent in water.

The cleaning agent of the present invention thus prepared is preferablysubjected to a treatment such as filtration before use. Water to be usedhere is preferably one purified to some extent by a treatment such asdistillation and ion exchange, and more preferably so-called ultra purewater used in the art.

The cleaning agent of the present invention is preferably acidic, and pHvalue thereof is, in the lower limit, usually not lower than 0.5,preferably not lower than 0.7, more preferably not lower than 1, furthermore preferably not lower than 2, and in the upper limit, usually nothigher than 6.5, preferably not lower than 5, further more preferablynot higher than 3.

In the cleaning agent of the present invention, besides the organicacid, the complexing agent and the organic solvent according to thepresent invention as described above, various kinds of auxiliarycomponents may be included within a range not impairing the effects ofthe present invention.

Such auxiliary components include those usually used in the art, andspecifically, for example, a reducing agent and a metal corrosioninhibitor which are used for the purposes of protecting Cu of wiring andpreventing corrosion of Cu, and a surfactant which is used for thepurpose of improving wetting property of the cleaning agent to a surfaceof semiconductor to enhance the cleaning effect.

The reducing agent includes, for example, hydrazine and derivativesthereof, ascorbic acid and formalin. These reducing agents may be usedalone or in an appropriate combination of two or more kinds.

Further, the metal corrosion inhibitor includes, as described above,aromatic compounds such as benzotriazole or derivatives thereof (forexample, JP-A-51-29338, JP-A-1-195292 and JP-A-10-265979) andbenzimidazoles (for example, JP-A-7-79061); cyclic compounds such asmercaptoimidazole and mercaptothiazole (for example, JP-A-2000-87268 andJP-A-2000-282096); aliphatic alcohol type compounds having a mercaptogroup in a molecule where a carbon to which a mercapto group is bondedand a carbon to which a hydroxyl group is bonded links togetheradjacently, such as mercaptoethanol and mercaptoglycerol (for example,JP-A-2000-273663); amino acids having a thiol group in a molecule suchas cysteine and N-acetylcysteine (for example, JP-A-2003-13266); andthioureas. These surfactants may be used alone or in an appropriatecombination of two or more kinds.

The surfactant includes, for example, nonionic surfactants having apolyoxyalkylene group in a molecule; anionic surfactants having a groupselected from sulfonic acid group, carboxyl group, phosphonic acidgroup, sulfoxyl group and phosphonoxyl group in a molecule; amphotericsurfactants such as alkylbetaine derivatives, imidazoliniumbetainederivatives, sulfobetaine derivatives, aminocarboxylic acid derivatives,imidazoline derivatives and amine oxide derivatives.

Nonionic surfactants having a polyoxyalkylenegroup in a moleculeinclude, for example, polyoxyalkylene alkylether and polyoxyalkylenepolyalkylarylether. More specifically, nonionic surfactants include, forexample, nonionic surfactants having a polyoxyehylene group in amolecule such as polyoxyethylene alkylether and polyoxyethylenealkylphenylether; nonionic surfactants having a polyoxypropylene groupin a molecule such as polyoxypropylene alkylether, polyoxypropylenealkylphenylether; nonionic surfactants having a polyoxyehylene group anda polyoxypropylene group in a molecule such aspolyoxyethylenepolyoxypropylene alkylether andpolyoxyethylenepolyoxypropylene alkylphenylether.

Among them, particularly preferable nonionic surfactants arepolyoxyalkylene alkylethers. More specifically, nonionic surfactantshaving a polyoxyethylene group in a molecule such as polyoxyethylenealkylether and nonionic surfactants having a polyoxyethylene and apolyoxypropylene groups in a molecule such as polyoxyethylenepolyoxypropylene alkylether are particularly preferable.

Further, among polyoxyalkylene alkylethers having a polyoxyethylene anda polyoxypropylene groups in a molecule, a compound represented by theformula: CH₃ (CH₂)_(k)—O— (CH₂ CH₂O)₁—(CH₂CH(CH₃)O)_(m)—H (wherein, k=7to 20, preferably 11, 1=4 to 20, preferably 13 to 14, m=1 to 6,preferably 1 to 2) is particularly preferable.

More specifically, methanol, ethanol, isopropyl alcohol,2-methoxyethanol, 2-(2-butoxyethoxy)ethanol, ethyleneglycol,diethyleneglycol monomethylether, acetone, acetonitrile andpolyoxyethylene polyoxypropylene alkylether (particularlyCH₃(CH₂)₁₁—O—(CH₂CH₂O)₁₃₋₁₄—(CH₂CH(CH₃)O)₁₋₂—H) are preferable. Amongthem, methanol, ethanol, isopropyl alcohol, 2-methoxyethanol,ethyleneglycol, diethyleneglycol monomethylether, acetonitrile andpolyoxyethylene polyoxypropylene alkylether [particularly CH₃(CH₂)₁₁—O—(CH₂CH₂O)₁₃₋₁₄—(CH₂CH(CH₃)O)₁₋₂—H] are more preferable.

Anionic surfactants having a group selected from sulfo group, carboxylicgroup, phosphonic acid group, sulfoxyl group and phosphonoxyl group in amolecule include, for example, anionic surfactants having a sulfo groupin a molecule such as alkylsulfonic acid, alkylbenzenesulfonic acid,alkylnaphthalene sulfonic acid, and salts thereof (for example, salts ofan alkali metal such as sodium and potassium; and ammonium salt);anionic surfactants having a carboxyl group in a molecule such asalkylcarboxylic acid, alkylbenzenecarboxylic acid,alkylnaphthalenecarboxylic acid, and salts thereof (for example, saltsof an alkali metal such as sodium and potassium; and ammonium salt);anionic surfactants having a phosphonic acid group in a molecule such asalkylphosphonic acid, alkylbenzenephosphonic acid,alkylnaphthalenephosphonic acid, and salts thereof (for example, saltsof an alkali metal such as sodium and potassium; and ammonium salt);anionic surfactants having a sulfoxyl group in a molecule such as alkylsulfate, alkylbenzene sulfate, polyoxyethylene alkyl sulfate,polyoxyethylene alkylbenzene sulfate, polyoxyethylene alkylnaphthalenesulfate, and salts thereof (for example, salts of an alkali metal suchas sodium and potassium; and ammonium salt).

Among them, anionic surfactants having a sulfo group or a sulfoxyl groupin a molecule are particularly preferable. More specifically, anionicsurfactants having a carboxyl group in a molecule such asalkylbenzenesulfonic acid and anionic surfactants having a sulfoxylgroup in a molecule such as polyoxyethylenealkyl sulfate areparticularly preferable.

Among the above mentioned surfactants, nonionic surfactants and anionicsurfactants are preferable.

These compounds may be used alone or in combination of two or morekinds.

These auxiliary components may be used in such a range of concentrationthat they are usually used in the art. For instance, the reducing agentmay be used in any amount, so long as the reducing agent can preventoxidation of metallic Cu. The lower limit thereof is usually not lessthan 0.01% by weight, preferably not less than 0.05% by weight, morepreferably not less than 0.07% by weight to the total amount of thecleaning agent, and the upper limit thereof is usually not more than 5%by weight, preferably not more than 1% by weight, more preferably notmore than 0.5% by weight to the total amount of the cleaning agent.Further, the metal corrosion inhibitor can be used in any amount, solong as the inhibitor can suppress dissolving power of the cleaningagent for Cu by forming a weak bond with metallic Cu. The lower limitthereof is usually not less than 0.01% by weight, preferably not lessthan 0.05% by weight, more preferably not less than 0.1% by weight tothe total amount of the cleaning agent, and the upper limit thereof isusually not more than 5% by weight, preferably not more than 1% byweight, more preferably not more than 0.5% by weight to the total amountof the cleaning agent. Also, the surfactant can be used in any amount,so long as the surfactant can lower down surface tension of the cleaningagent. The lower limit thereof is usually not less than 0.0001% byweight, preferably not less than 0.001% by weight, more preferably notless than 0.005% by weight to the total amount of the cleaning agent,and the upper limit thereof is usually not more than 1% by weight,preferably not more than 0.5% by weight, more preferably not more than0.1% by weight to the total amount of the cleaning agent.

In this connection, in the present invention, use of the followingcompounds is not desirable: compounds which dissolve the metal corrosioninhibiting film (particularly a Cu-BTA film) formed on the substratesurface by decreasing pH value of the cleaning agent (for example, aninorganic acid such as hydrochloric acid, nitric acid, sulfuric acid,phosphoric acid and hydrofluoric acid), compounds which oxidize themetal corrosion inhibiting film (for example, an oxidizing agent such asphosphorus acid), and compounds which cause a defective Cu wiring ordissolution of Cu by specifically reacting with Cu ion to form a complexwith Cu (for example, phenanthroline or derivatives thereof).

The cleaning agent of the present invention shows an effective cleaningeffect even at room temperature, but may be used after properly warmedup, because the removal effect for fine particles is rather larger at ahigher temperature. When warmed up, the lower limit of the temperatureis usually not lower than 30° C., preferably not lower than 35° C., morepreferably not lower than 40° C., and the upper limit thereof is usuallynot higher than 80° C., preferably not higher than 70° C., and morepreferably not higher than 60° C.

A method for cleaning a surface of substrate of the present inventionmay be treating the surface of semiconductor with the cleaning agent ofthe present invention as described above.

As a method for treating a surface of substrate with the cleaning agentof the present invention, any method may be used so long as the cleaningagent of the present invention can contact with a surface of substrate,and methods which are commonly employed in the art and already known areused.

Specifically, those includes, for example, a method where the cleaningagent of the present invention is simply coated on a surface ofsubstrate, a method where a substrate is dipped in the cleaning agent ofthe present invention (dipping treatment), a method where the cleaningagent of the present invention is sprinkled like a shower or sprayed ona surface of substrate (single-wafer-based treatment).

Moreover, in the present invention, particles, metallic impurities and acarbon defect can be more effectively removed by using a physicalcleaning in combination in the cleaning.

Specific methods of the combined use include subjecting a surface ofsubstrate to a physical cleaning process in the presence of the cleaningagent of the present invention.

In the above-described method, a method for providing the cleaning agentof the present invention includes, for example, a method to apply aphysical cleaning process in a state in which a cleaning agent of thepresent invention exist specifically by the above described method forcleaning the surface of substrate (coating method, dipping treatment andsingle-wafer-based treatment). Further, the physical cleaning (process)includes, for example, brush-scrub cleaning where a surface of substrateis cleaned with a brush made of polyvinyl alcohol rotating at a highspeed and megasonic cleaning where high frequency wave is used.

A more specific technique when physical cleaning is used in combinationincludes, for example, a method to apply a physical cleaning afterproviding a cleaning agent of the present invention on the surface of asemiconductor by coating said cleaning agent on the surface of asemiconductor, a method to apply a physical cleaning after providing acleaning agent of the present invention on the surface of asemiconductor by dipping the semiconductor in said cleaning agent, thentaking it out of said cleaning agent, a method to apply a physicalcleaning while a semiconductor is dipped in a cleaning agent of thepresent invention, a method to apply a physical cleaning after providinga cleaning agent of the present invention on the surface of asemiconductor by showering said cleaning agent on the surface of thesemiconductor, or a method to apply a physical cleaning while a cleaningagent of the present invention is showered on the surface of asemiconductor.

Since the cleaning agent of the present invention has not onlycapability of removing a carbon defect, but also capabilities ofremoving particles and metallic impurities, not only a carbon defect,but also particles and metallic impurities which remain on or adhered toa surface of substrate can be removed (cleaned) at the same time, bytreating the surface of substrate with the cleaning agent of the presentinvention.

Thus, the surface of substrate can be sufficiently cleaned only by usingthe cleaning agent of the present invention, but the surface ofsubstrate may be subjected to the cleaning method using the cleaningagent of the present invention as described above, then further cleanedwith a cleaning agent for a substrate which is already known.

By treating in such way, it becomes possible to clean a surface ofsubstrate with high precision. In this connection, as the already knowncleaning agent for a substrate to be used, cleaning agents usually usedin the art can be used, as disclosed, for instance, in JP-A-4-130100,JP-A-5-263275, JP-A-6-112646, JP-A-6-287774, JP-A-7-79061,JP-A-7-166381, JP-A-7-267933, JP-A-7-292483, JP-A-7-54169,JP-A-10-26832, JP-A-10-72594, JP-A-10-251867, JP-A-11-50275,JP-A-2000-8185 and JP-A-2002-20787. Among them, a so-called acidiccleaning agent is preferable.

The cleaning agent of the present invention can be used, for example,for a substrate of semiconductor such as a so-called silicone wafer anda semiconductor of compounds (for example GaAs and GaP), a printedcircuit board such as a polyimide resin, and a glass substrate for LCDand PDP, and is particularly useful for a substrate of semiconductor.

Further, among these substrates, the cleaning agent of the presentinvention is useful for a substrate which is provided with wiring ofmetals such as copper, silver, aluminum, tungsten-plug, chrome and goldon the surface thereof, and among them, for a substrate which isprovided with copper or silver wiring, and particularly for a substratewhich is provided with copper wiring, and is most useful for a substrateof semiconductor which is provided with copper wiring on the surfacethereof.

EFFECT OF THE INVENTION

By using the cleaning agent of the present invention, fine particles(particles) and impurities derived from various kinds of metals(metallic impurities) present on a surface of substrate can beeffectively removed without causing corrosion or oxidation of metallicwiring, especially copper wiring provided on the substrate surface, andfurther, a carbon defect present on the substrate surface can also beremoved at the same time without removing a metal corrosion inhibitor—Cufilm, in particular, a Cu-BTA film.

Hereinafter, the present invention will be explained in detail byillustrating Examples and Comparative Examples, but the presentinvention should not be construed to be limited thereby in the least.

A metallic Cu deposited wafer, a wafer provided with a Cu-BTA film, awafer contaminated with a carbon defect and a wafer contaminated with ametal used in the present Examples and Comparative Examples are preparedaccording to the following methods and used, and a thickness of Cu filmon a surface of the metallic Cu deposited wafer, a thickness of Cu-BTAfilm on a surface of the wafer provided with a Cu-BTA film, and anadsorption amount (a remaining metal concentration) of metal (Fe atom,Al atom and Cu atom) adsorbed and remaining on a surface of the wafercontaminated with a metal were measured according to the followingmethods, respectively.

[Metallic Cu Deposited Wafer]

The metallic Cu deposited wafer was obtained by depositing metallic Cuon a surface of 4-inch silicone wafer by a sputtering method.

In this connection, it was confirmed by the method shown below that athickness of copper on a surface of said metallic Cu deposited wafer was1,000 nm.

[Wafer Provided with a Cu-BTA Film]

The wafer provided with a Cu-BTA film was obtained by oxidizing a Cusurface of the metallic Cu deposited wafer with 0.1% H₂O₂ for 15 min,thereafter dipping in 1% aqueous BTA solution for 20 min.

In this connection, it was confirmed by the method shown below that athickness of Cu-BTA film on a surface of said wafer provided with aCu-BTA film was 100 nm.

[Wafer Contaminated with a Carbon Defect]

The wafer contaminated with a carbon defect was obtained by dipping thewafer provided with a Cu-BTA film in a saturated BTA aqueous solution at80° C. for 40 min, then cooling the wafer at 10° C. under the nitrogenatmosphere.

In this connection, it was confirmed by direct measurement using anAuger photoelectron spectroscopic analyzer that the carbon defect wasadsorbed and remaining on a Cu-BTA film of the wafer surface.

[Wafer Contaminated with Metal]

The wafer contaminated with metal was obtained dipping a 6-inch siliconewafer, surface of which was oxidized to SiO₂ by thermal oxidation, in 1L of an aqueous slurry (a 0.1% hydrogen peroxide aqueous containing 1%of silica) added with Fe ion so as to be 0.1 ppm, 1 L of an aqueousslurry (a 0.1% hydrogen peroxide containing 1% of silica) added with Alion so as to be 0.1 ppm, or 1 L of an aqueous slurry (a 0.1% hydrogenperoxide containing 1% of silica) added with Cu ion so as to be 0.1 ppm,each for 1 min, respectively, then rinsing the wafer with flowing ultrapure water for 10 min, followed by spin-drying.

In this connection, it was confirmed by the methods shown below, that5×10¹³ atom/cm² of Fe (iron atom), 8×10¹³ atom/cm² of Al (aluminumatom), or 3×10¹⁴ atom/cm² of Cu (copper atom) was adsorbed andremaining, respectively.

[Wafer Contaminated with Particles]

The wafer contaminated with particles was obtained by dipping a waferprovided with a Cu-BTA film in an aqueous slurry of 3% alumina having anaverage particle diameter of 0.2 μm for 1 min, then rinsing the waferwith flowing ultra pure water for 10 min, followed by spin-drying.

In this connection, it was confirmed by the method shown below thatabout 8,000 particles per 6-inch wafer were adsorbed and remaining onsaid wafer.

[Measuring Method for Thickness of Metallic Cu Film]

A wafer was divided into two halves, and a thickness of metallic Cu filmwas measured by observing the cross section thereof using an electronmicroscope.

[Measuring Method for Thickness of Cu-BTA Film]

A wafer was divided into two halves, and thickness of a Cu-BTA film wasmeasured by observing the cross section thereof using a SEM (a scanningelectron microscope).

[Measuring Method for Metal Concentration]

Metals (Fe, Al and Cu) adsorbed and remaining on the wafer surface weredissolved with an aqueous solution of hydrofluoric acid and nitric acidand recovered, then metal concentration in said recovered solution wasmeasured by an atomic absorption spectrometry (a graphite furnace atomicabsorption spectrometer). Adsorption amounts (remaining metalconcentrations) of metal atoms (Fe atom, Al atom and Cu atom) werecalculated based on the measured values obtained.

[Measuring Method for Number of Particle]

Particles adsorbed and remaining on the wafer surface were measuredusing a surface foreign material inspection apparatus (a particlecounter).

In this connection, in the present Examples and Comparative Examples,all of %, ppm and ppb representing a concentration are based on a weightratio, unless otherwise noted. Further, all of waters used were ultrapure water, and were used after confirming that Fe, Al or Cu containedwas not more than 0.01 ppb, respectively.

EXAMPLES Examples 1 to 44

Each of the wafer contaminated with a carbon defect, the wafer providedwith a Cu-BTA film and the metallic Cu deposited wafer, which wereprepared by the above-described methods, was dipping in 1 L of eachcleaning agent described in Table 1 at room temperature for 5 hours.Thereafter, each of waters was taken out, rinsed with ultra pure waterfor 10 min, and spin-dried.

As to the wafer contaminated with a carbon defect thus treated, presenceof the carbon defect adsorbed and remaining on said wafer surface wasconfirmed to evaluate capability of removing carbon defect, by directmeasurement using an Auger photoelectron spectroscopic analyzer.

And as to the wafer provided with a Cu-BTA film, thickness of a Cu-BTAfilm on the wafer surface was measured to confirm an influence(occurrence of dissolution and elution) on the Cu-BTA film.

Further, as to the metallic Cu deposited wafer, color tone of a Cu filmsurface on the wafer surface was checked by visual examination toconfirm oxidation of metallic Cu, and film thickness of metallic Cu onthe wafer surface was measured to confirm occurrence of corrosion on themetallic Cu.

The results are shown in Table 1. TABLE 1 conc. conc. Ability forThickness of Thickness Organic (% by Complexing % by conc. removingCu-BTA film Color tone of Cu film Ex. acid WT) agent ( WT) Organicsolvent (% by WT) pH carbon defect (nm) of Cu film (nm) 1 oxalic acid 5— methanol 0.2 2 ◯ 100 metallic luster 1000 2 oxalic acid 5 — ethanol0.2 2 ◯ 100 metallic luster 1000 3 oxalic acid 5 — isopropylalcohol 0.22 ◯ 90 metallic luster 1000 4 oxalic acid 5 — 2-methoxyethanol 0.2 2 ◯100 metallic luster 1000 5 oxalic acid 2 — ethylene glycol 3 2 ◯ 100metallic luster 1000 6 oxalic acid 5 — acetone 0.2 2 ◯ 100 metallicluster 1000 7 oxalic acid 5 — acetonitrile 0.2 2 ◯ 100 metallic luster1000 8 citric acid 5 — methanol 0.2 2 ◯ 100 metallic luster 1000 9citric acid 5 — ethanol 0.2 2 ◯ 100 metallic luster 1000 10 citric acid10 — isopropylalcohol 0.2 2 ◯ 90 metallic luster 1000 11 citric acid 5 —2-methoxyethanol 5 2 ◯ 100 metallic luster 900 12 citric acid 5 —ethylene glycol 0.2 2 ◯ 100 metallic luster 1000 13 citric acid 25 —acetone 10 1 ◯ 100 metallic luster 1000 14 citric acid 5 — acetonitrile10 2 ◯ 100 metallic luster 900 15 — EDTA 0.01 methanol 10 5 ◯ 100metallic luster 1000 16 — CyDTA 0.01 methanol 0.2 5 ◯ 100 metallicluster 1000 17 — CyDTA 0.01 ethylene glycol 10 5 ◯ 100 metallic luster1000 18 — HEDPO 5 methanol 0.2 1 ◯ 100 metallic luster 1000 19 — HEDPO0.1 acetonitrile 10 3 ◯ 100 metallic luster 1000 20 — EDTPO 0.1isopropylalcohol 0.2 3 ◯ 100 metallic luster 1000 21 acetic acid 5 EDTA0.1 methanol 0.2 2 ◯ 90 metallic luster 1000 22 oxalic acid 5 EDTA 0.1methanol 10 2 ◯ 100 metallic luster 1000 23 oxalic acid 5 EDTA 0.1acetone 0.2 2 ◯ 100 metallic luster 1000 24 oxalic acid 5 CyDTA 0.01methanol 10 2 ◯ 90 metallic luster 1000 25 oxalic acid 2 CyDTA 0.01ethylene glycol 0.2 2 ◯ 100 metallic luster 1000 26 oxalic acid 5 HEDPO0.1 methanol 0.2 2 ◯ 100 metallic luster 1000 27 oxalic acid 1 EDTPO 0.1isopropylalcohol 10 2 ◯ 100 metallic luster 1000 28 oxalic acid 5 DEPPO1 isopropylalcohol 0.2 2 ◯ 100 metallic luster 1000 29 citric acid 5EDTA 0.01 methanol 0.2 2 ◯ 100 metallic luster 1000 30 citric acid 5EDTA 0.01 ethanol 5 2 ◯ 100 metallic luster 1000 31 citric acid 5 EDTA0.01 isopropylalcohol 0.2 1 ◯ 100 metallic luster 1000 32 citric acid 20EDTA 0.01 acetone 0.2 1 ◯ 100 metallic luster 1000 33 citric acid 5CyDTA 0.01 methanol 10 2 ◯ 90 metallic luster 1000 34 citric acid 5CyDTA 0.01 ethylene glycol 0.2 2 ◯ 100 metallic luster 1000 35 citricacid 10 EDTA 0.01 diethylene glycol 0.2 2 ◯ 100 metallic luster 1000 36citric acid 5 CyDTA 0.01 acetone 0.2 2 ◯ 90 metallic luster 1000 37citric acid 5 EDTA 0.01 acetonitrile 0.2 2 ◯ 100 metallic luster 1000 38citric acid 5 TETHP 0.03 methanol 0.2 2 ◯ 100 metallic luster 1000 39citric acid 20 HEDPO 5 methanol 8 1 ◯ 100 metallic luster 1000 40 citricacid 5 EDTPO 0.1 isopropylalcohol 10 2 ◯ 100 metallic luster 1000 41citric acid 5 TETHP 0.1 2-methoxyethanol 0.2 2 ◯ 100 metallic luster1000 42 citric acid 5 DEPPO 0.1 ethylene glycol 0.2 2 ◯ 100 metallicluster 1000 43 citric acid 10 DEPPO 5 diethylene glycol 5 1 ◯ 100metallic luster 1000 44 citric acid 5 DEPPO 0.1 diethylene glycol 0.2 2◯ 100 metallic luster 1000

Comparative Examples 1 to 82

A wafer contaminated with a carbon defect, a wafer provided with aCu-BTA film and a metallic Cu deposited wafer were treated in the samemanner as in Examples 1 to 44 except that various solutions described inTable 2 were used, thereafter similar measurement and evaluation tothose in Examples 1 to 44 were carried out on each of these wafers.

The results are shown in Table 3. TABLE 2 Thick- Ability for ness ofconc. conc. conc. removing Cu-BTA Thickness Comp. (% by Complexing (% by(% by carbon film Color tone of Cu film Ex. Organic acid WT) agent WT)Organic solvent WT) pH defect (nm) of Cu film (nm) 1 — — — 7 X 100metallic luster 1000 2 hydrochloric acid 1 — — 1 — 0 loss of luster 4003 oxalic acid 5 — — 2 X 100 metallic luster 1000 4 citric acid 5 — — 2 X100 metallic luster 1000 5 — EDTA 0.01 — 5 X 100 metallic luster 1000 6— CyDTA 0.01 — 5 X 100 metallic luster 900 7 — HEDPO 0.1 — 3 X 100metallic luster 1000 8 — EDTPO 0.1 — 3 X 100 metallic luster 1000 9 — —methanol 0.2 7 X 100 metallic luster 1000 10 — — acetonitrile 0.2 7 X100 metallic luster 1000 11 — — dimethylsulfoxide 0.2 7 X 100 metallicluster 1000 12 — — dimethylformamide 0.2 7 X 100 metallic luster 1000 13phosphoric acid 2 CyDTA 0.01 — 2 X 100 metallic luster 950 14 aceticacid 4 HEDPO 0.1 — 2 X 90 metallic luster 1000 15 oxalic acid 5 EDTA0.01 — 2 X 100 metallic luster 1000 16 oxalic acid 5 HEDPO 0.1 — 2 X 100metallic luster 1000 17 oxalic acid 5 CyDTA 0.01 — 2 X 100 metallicluster 900 18 oxalic acid 5 EDTPO 0.1 — 2 X 100 metallic luster 1000 19citric acid 5 EDTA 0.01 — 2 X 100 metallic luster 1000 20 citric acid 5HEDPO 0.1 — 2 X 100 metallic luster 1000 21 citric acid 5 CyDTA 0.01 — 2X 100 metallic luster 1000 22 citric acid 5 EDTPO 0.1 — 2 X 90 metallicluster 1000 23 oxalic acid 5 — dimethylsulfoxide 3 2 X 100 metallicluster 1000 24 oxalic acid 5 — dimethylformamide 3 2 X 100 metallicluster 1000 25 oxalic ocid 5 — γ-butyrolactone 3 2 X 100 metallic luster900 26 oxalic ocid 5 — tetrahydrofuran 3 2 X 100 metallic luster 1000 27citric acid 5 — dimethylsulfoxide 3 2 X 100 metallic luster 1000 28citric acid 5 — dimethylformamide 3 2 X 100 metallic luster 1000 29citric acid 5 — γ-butyrolactone 3 2 X 100 metallic luster 1000 30 citricacid 5 — tetrahydrofuran 3 2 X 100 metallic luster 1000 31 — EDTA 0.01dimethylsulfoxide 3 5 X 90 metallic luster 1000 32 — HEDPO 1dimethylsulfoxide 3 3 X 90 metallic luster 1000 33 — CyDTA 0.01dimethylformamide 3 5 X 100 metallic luster 1000 34 — HEDPO 5dimethylformamide 3 3 X 100 metallic luster 1000 35 — TETHP 0.03dimethylformamide 3 3 X 100 metallic luster 1000 36 — TETHP 0.03γ-butyrolactone 3 3 X 90 metallic luster 1000 37 — EDTA 0.01tetrahydrofuran 3 3 X 90 metallic luster 1000 38 — CyDTA 0.01 methyl3-methoxy 3 3 X 100 metallic luster 1000 propionate 39 phosphoric acid 2EDTA 0.01 methanol 3 2 X 100 metallic luster 950 40 hydrochloric acid 1EDTPO 0.1 methanol 3 1 — 0 loss of luster 500 41 nitric acid 0.5 HEDPO0.1 methanol 3 1 — 0 loss of luster 400 42 nitric acid 0.5 EDTA 0.01ethanol 3 1 — 0 loss of luster 400 43 nitric acid 0.5 TETHP 0.1isopropylalcohol 3 1 — 0 loss of luster 400 44 nitric acid 0.5 DEPPO 52-methoxyethanol 3 1 — 0 loss of luster 400 45 nitric acid 0.5 EDTA 0.012-(2-butoxyethoxy) 3 1 — 0 loss of luster 400 ethanol 46 nitric acid 0.5EDTA 0.01 ethylene glycol 3 1 — 0 loss of luster 500 47 nitric acid 0.5EDTA 0.01 diethylene glycol 3 1 — 0 loss of luster 400 48 nitric acid0.5 EDTA 0.01 acetone 3 1 — 0 loss of luster 500

TABLE 3 Thick- conc. Ability for ness of (% conc. conc. removing Cu-BTAThickness Comp. by Complexing (% by (% by carbon film Color tone of Cufilm Ex. Organic acid WT) agent WT) Organic solvent WT) pH defect (nm)of Cu film (nm) 49 nitric acid 0.5 HEDPO 0.1 acetonitrile 3 1 — 0 lossof luster 500 50 hydrofluoric acid 0.1 EDTA 0.01 methanol 3 1 — 0 lossof luster 500 51 hydrofluoric acid 0.1 TETHP 0.01 ethanol 3 1 — 0 lossof luster 400 52 hydrofluoric acid 0.1 DEPPO 1 isopropylalcohol 3 1 — 0loss of luster 400 53 hydrofluoric acid 0.1 EDTA 0.01 2-methoxyethanol 31 — 0 loss of luster 400 54 hydrofluoric acid 0.1 DEPPO 0.12-(2-butoxyethoxy) 3 1 — 0 loss of luster 400 ethanol 55 hydrofluoricacid 0.1 EDTA 0.01 ethylene glycol 3 1 — 0 loss of luster 400 56hydrofluoric acid 0.1 TETHP 0.03 diethylene glycol 3 1 — 0 loss ofluster 400 57 hydrofluoric acid 0.1 EDTA 0.01 acetone 3 1 — 0 loss ofluster 400 58 hydrofluoric acid 0.1 EDTA 0.01 acetonitrile 3 1 — 0 lossof luster 400 59 nitric acid 0.5 EDTA 0.01 dimethylsulfoxide 3 1 — 0loss of luster 400 60 nitric acid 0.5 TETHP 0.1 dimethylformamide 3 1 —0 loss of luster 400 61 nitric acid 0.5 TETHP 0.1 γ-butyrolactone 3 1 —0 loss of luster 400 62 nitric acid 0.5 DEPPO 2 tetrahydrofuran 3 1 — 0loss of luster 400 63 nitric acid 0.5 EDTA 0.01 methyl 3-methoxy 3 1 — 0loss of luster 400 propionate 64 hydrofluoric acid 0.1 CyDTA 0.01dimethylsulfoxide 3 1 — 0 loss of luster 500 65 hydrofluoric acid 0.1EDTA 1 dimethylformamide 3 1 — 0 loss of luster 400 66 hydrofluoric acid0.1 TETHP 0.1 γ-butyrolactone 3 1 — 0 loss of luster 400 67 hydrofluoricacid 0.1 EDTA 0.01 tetrahydrofuran 3 1 — 0 loss of luster 400 68hydrofluoric acid 0.1 EDTA 0.01 methyl 3-methoxy 1 — 0 loss of luster400 propionate 69 oxalic acid 5 EDTA 0.01 dimethylsulfoxide 3 2 X 100metallic luster 1000 70 oxalic acid 5 CyDTA 0.01 dimethylformamide 3 2 X100 metallic luster 1000 71 citric acid 5 EDTA 0.01 dimethylsulfoxide 32 X 90 metallic luster 1000 72 citric acid 4 TETHP 0.1 dimethylsulfoxide3 2 X 100 metallic luster 1000 73 citric acid 10 CyDTA 0.01dimethylformamide 3 2 X 90 metallic luster 1000 74 citric acid 5 HEDPO 1dimethylformamide 3 2 X 100 metallic luster 1000 75 citric acid 20 TTHA0.01 γ-butyrolactone 3 1 X 100 metallic luster 1000 76 citric acid 5EDTA 0.1 tetrahydrofuran 3 2 X 90 metallic luster 1000 77 citric acid 5HEDPO 0.5 methyl 3-methoxy 3 2 X 100 metallic luster 1000 propionate 78citric acid 5 hexameta- 0.1 — 2 X 100 metallic luster 1000 phosphoricacid 79 citric acid 10 ammonium 1 — 2 — 0 loss of luster 400 fluoride 80citric acid 5 ammonium 0.1 — 2 — 0 loss of luster 400 fluoride 81 citricacid 5 ammonium 0.2 — 2 — 0 loss of luster 400 fluoride 82 citric acid 5ammonium 0.2 — 2 — 0 loss of luster 400 fluoride

As apparent from Tables 1, 2 and 3, when the cleaning agents of thepresent invention are used (Examples 1 to 44), followings can beunderstood: (1) carbon defect can be well removed; (2) color tone of asurface of Cu film on a wafer surface is not changed, proving that themetallic Cu has not been oxidized; (3) thickness of a Cu film showslittle change, proving that the metallic Cu has not been corroded; (4)thickness of a Cu-BTA film shows little change, proving that the Cu-BTAfilm has been hardly removed.

On the contrary, it can be understood that a carbon defect cannot beremoved when an organic acid (Comparative Examples 2 to 4), a complexingagent (Comparative Examples 5 to 8) or an organic solvent (ComparativeExamples 9 to 12) is used alone, or when only an organic acid and acomplexing agent are used in combination (Comparative Examples 13 to 22and Comparative Examples 78 to 82).

Further, as apparent from a comparison between Examples 1 to 14 andComparative Examples 23 to 30, a comparison between Examples 15 to 20and Comparative Examples 31 to 38, and a comparison between Examples 39to 48 and Comparative Examples 69 to 77, it can be understoodrespectively that a carbon defect cannot be removed when a cleaningagent containing an organic solvent other than the organic solventaccording to the present invention is used. Furthermore, as apparentfrom a comparison between Examples 21 to 44 and Comparative Examples 39to 68, it can be also understood that a carbon defect cannot be removedor a Cu-BTA film or a Cu film is dissolved, when a cleaning agentcontaining an acid other than the organic acid according to the presentinvention is used.

As apparent from the above, it can be understood that a carbon defectcan be well removed without causing corrosion or oxidation of Cu orfurther losing a Cu-BTA film, only when the specified organic acidand/or the specified complexing agent and the specified organic solventaccording to the present invention are used in combination.

Examples 45 to 76

Each of the wafers contaminated with metals prepared by theabove-described method was dipped in 1 L each of cleaning agentsdescribed in Table 4, at room temperature for 1 hour. Thereafter, thewafer was taken out, rinsed with ultra pure water for 10 min, andspin-dried.

For the wafers contaminated with metals thus treated, remaining metalconcentrations (remaining Fe concentration, remaining Al concentration,and remaining Cu concentration) adsorbed and remaining on a surface ofthe wafer were measured, to evaluate capability of removing metallicimpurities.

The results are shown in Table 4. TABLE 4 remaining remaining remainingconc. Complex- conc. conc. Fe conc. Al conc. Cu conc. Ex. Organic acid(% by WT) ing agent (% by WT) Organic solvent (% by WT) pH (Fe atom/cm²)(Al atom/cm²) (Cu atom/cm²) 45 citric acid 5 — methanol 0.2 2 4 × 10¹³ 9× 10¹² 2 × 10¹² 46 acetic acid 5 — methanol 0.2 2 6 × 10¹² 4 × 10¹² 4 ×10¹² 47 malonic acid 5 — isopropylalcohol 5 3 7 × 10¹² 8 × 10¹² 3 × 10¹²48 fumaric acid 5 — 2-methoxyethanol 10 3 3 × 10¹² 2 × 10¹² 1 × 10¹³ 49malic acid 5 — ethylene glycol 2 3 9 × 10¹² 5 × 10¹² 7 × 10¹² 50tartaric acid 5 — diethylene glycol 5 3 5 × 10¹² 9 × 10¹² 8 × 10¹²monomethyl ether 51 oxalic acid 5 — acetone 0.2 2 6 × 10¹² 7 × 10¹² 3 ×10¹² 52 oxalic acid 5 — acetonitrile 0.2 2 1 × 10¹³ 3 × 10¹² 9 × 10¹² 53— EDTA 0.01 methanol 0.2 5 4 × 10¹² 6 × 10¹² 8 × 10¹² 54 — DEPPO 0.1methanol 0.2 3 4 × 10¹² 1 × 10¹¹ 5 × 10¹¹ 55 — EDTPO 5 isopropylalcohol0.2 2 6 × 10¹¹ 4 × 10¹¹ 6 × 10¹¹ 56 — CyDTA 0.01 2-methoxyethanol 0.2 53 × 10¹² 7 × 10¹² 4 × 10¹² 57 — HEDPO 0.1 2-methoxyethanol 0.2 5 4 ×10¹¹ 2 × 10¹² 7 × 10¹¹ 58 — HEDPO 0.1 ethylene glycol 0.2 3 2 × 10¹² 1 ×10¹¹ 3 × 10¹¹ 59 — DETPPO 5 diethylene glycol 0.2 2 4 × 10¹¹ 6 × 10¹¹ 4× 10¹¹ monomethyl ether 60 — DETPPO 0.1 diethylene glycol 0.2 3 2 × 10¹¹4 × 10¹¹ 4 × 10¹¹ monomethyl ether 61 — HEDPO 0.1 acetone 5 3 4 × 10¹¹ 3× 10¹¹ 4 × 10¹¹ 62 — PTDMP 0.1 acetone 0.2 3 2 × 10¹¹ 2 × 10¹¹ 9 × 10¹¹63 — EDTA 0.1 acetonitrile 5 5 7 × 10¹² 5 × 10¹² 7 × 10¹² 64 — EDDPO 0.1acetonitrile 0.2 3 2 × 10¹¹ 4 × 10¹¹ 3 × 10¹¹ 65 citric acid 10 EDTA0.01 methanol 0.2 2 7 × 10¹¹ 9 × 10¹¹ 8 × 10¹¹ 66 acetic acid 5 DEPPO 5ethanol 0.2 1 9 × 10¹⁰ 4 × 10¹¹ 6 × 10¹⁰ 67 malonic acid 5 DEPPO 0.1ethanol 0.2 2 4 × 10¹¹ 4 × 10¹⁰ 3 × 10¹¹ 68 fumaric acid 5 DEPPO 0.1ethanol 0.2 2 2 × 10¹⁰ 3 × 10¹⁰ 3 × 10¹⁰ 69 malic acid 5 DEPPO 0.1ethanol 0.2 2 4 × 10¹⁰ 8 × 10¹⁰ 4 × 10¹⁰ 70 tartaric acid 5 DEPPO 0.1ethanol 0.2 3 4 × 10¹⁰ 9 × 10¹⁰ 4 × 10¹⁰ 71 citric acid 20 DEPPO 5ethanol 10 1 7 × 10¹⁰ 4 × 10¹⁰ 2 × 10¹¹ 72 citric acid 5 hexameta- 0.1ethanol 0.2 2 9 × 10¹¹ 7 × 10¹⁰ 4 × 10¹⁰ phosphoric acid 73 citric acid5 EDTPO 0.1 isopropylalcohol 0.2 2 2 × 10¹⁰ 9 × 10¹⁰ 7 × 10¹⁰ 74 citricacid 5 TTHA 0.01 isopropylalcohol 0.2 2 3 × 10¹¹ 3 × 10¹¹ 5 × 10¹¹ 75citric acid 10 TETHP 0.1 ethylene glycol 5 2 5 × 10¹¹ 4 × 10¹⁰ 4 × 10¹⁰76 citric acid 5 NTPO 0.1 ethylene glycol 0.2 2 4 × 10¹⁰ 6 × 10¹⁰ 3 ×10¹¹

Comparative Examples 83 to 95

The wafers contaminated with metals were treated in the similar way asin Examples 45 to 76 except for using various solutions described inTable 5. Thereafter, the same measurement and evaluation as in Examples45 to 76 were carried out for the wafers contaminated with metals.

The results are shown in Tables 5. TABLE 5 conc. conc. remainingremaining remaining Comp. (% by Complexing (% by Organic conc. Fe conc.Al conc. Cu conc. Ex. Organic acid WT) agent WT) solvent (% by WT) pH(Fe atom/cm²) (Al atom/cm²) (Cu atom/cm²) 83 — — — 7 1 × 10¹³ 9 × 10¹² 7× 10¹² 84 — HEDEPO 0.1 — 3 4 × 10¹² 6 × 10¹² 7 × 10¹² 85 citric acid 20EDTPO 5 — 1 1 × 10¹⁰ 6 × 10¹⁰ 7 × 10¹⁰ 86 citric acid 5 TTHA 0.01 — 2 1× 10¹⁰ 5 × 10¹¹ 5 × 10¹¹ 87 citric acid 5 DEPPO 1 — 2 4 × 10¹⁰ 9 × 10¹⁰8 × 10¹¹ 88 citric acid 5 EDTA 0.01 — 2 9 × 10¹⁰ 9 × 10¹² 6 × 10¹⁰ 89citric acid 5 TETHP 0.1 — 2 7 × 10¹¹ 8 × 10¹¹ 8 × 10¹⁰ 90 citric acid 5NTPO 0.1 — 2 4 × 10¹⁰ 1 × 10¹¹ 3 × 10¹¹ 91 citric acid 5 hexameta- 0.1 —2 4 × 10¹¹ 7 × 10¹⁰ 9 × 10¹⁰ phosphoric acid 92 citric acid 5 ammonium 1— 2 5 × 10¹¹ 1 × 10¹¹ 3 × 10¹¹ fluoride 93 citric acid 5 ammonium 0.1 —2  4 × 10¹²¹ 2 × 10¹¹ 1 × 10¹¹ fluoride 94 citric acid 5 ammonium 0.2 —2 4 × 10¹⁰ 9 × 10¹⁰ 9 × 10¹⁰ fluoride 95 citric acid 5 ammonium 0.2 — 24 × 10¹⁰ 8 × 10¹⁰ 6 × 10¹⁰ fluoride

As apparent from the results of Table 4 and Table 5, it can beunderstood that use of the cleaning agent of the present invention cangreatly reduce an amount of metal remaining on a surface of wafer andthe capability thereof is equivalent or better than the cleaning agentconventionally used.

As apparent from the above, it can be understood that the cleaning agentaccording to the present invention can not only well remove a carbondefect remaining on a surface of substrate, but also effectively removeimpurities derived from various kinds of metals (metallic impurities) atthe same time.

Examples 77 to 108

The wafers contaminated with metals prepared by the above method weresubjected to a brush scrub cleaning using a brush made of poly(vinylalcohol), while each of the cleaning agents described in Table 6 wassprayed on a surface of said wafers. The treatment temperature was 25°C., and cleaning time was 1 min. After cleaning, the wafers were rinsedwith ultra pure water for 10 min, and spin-dried.

For the wafers contaminated with metals thus treated, remaining metalconcentrations (remaining Fe concentration, remaining Al concentration,and remaining Cu concentration) adsorbed and remaining on a surface ofthe wafer were measured, to evaluate capability of removing metallicimpurities.

The results are shown in Table 6 TABLE 6 conc. remaining remainingremaining (% by Complexing conc. conc. Fe conc. Al conc. Cu conc. Ex.Organic acid WT) agent (% by WT) Organic solvent (% by WT) pH (Featom/cm²) (Al atom/cm²) (Cu atom/cm²) 77 citric acid 5 — methanol 0.2 28 × 10¹² 1 × 10¹³ 1 × 10¹³ 78 acetic acid 5 — methanol 0.2 2 7 × 10¹² 6× 10¹² 7 × 10¹² 79 malonic acid 5 — isopropylalcohol 5 3 5 × 10¹² 1 ×10¹³ 8 × 10¹² 80 fumaric acid 5 — 2-methoxyethanol 10 3 9 × 10¹² 1 ×10¹³ 9 × 10¹² 81 malic acid 5 — ethylene glycol 2 3 6 × 10¹² 1 × 10¹³ 8× 10¹² 82 tartaric acid 5 — diethylene glycol 5 3 8 × 10¹² 7 × 10¹² 5 ×10¹² monomethyl ether 83 oxalic acid 5 — acetone 0.2 2 9 × 10¹² 5 × 10¹²8 × 10¹² 84 oxalic acid 5 — acetonitrile 0.2 2 7 × 10¹² 6 × 10¹² 1 ×10¹³ 85 — EDTA 0.01 methanol 0.2 5 9 × 10¹² 8 × 10¹² 1 × 10¹³ 86 — DEPPO0.1 methanol 0.2 3 1 × 10¹² 6 × 10¹¹ 7 × 10¹¹ 87 — EDTPO 0.1isopropylalcohol 0.2 2 5 × 10¹¹ 1 × 10¹² 9 × 10¹¹ 88 — CyDTA 0.012-methoxyethanol 0.2 5 5 × 10¹² 1 × 10¹³ 6 × 10¹² 89 — HEDPO 0.12-methoxyethanol 0.2 3 5 × 10¹¹ 1 × 10¹² 3 × 10¹¹ 90 — HEDPO 0.1ethylene glycol 0.2 3 6 × 10¹¹ 7 × 10¹¹ 6 × 10¹¹ 91 — DETPPO 5diethylene glycol 0.2 2 5 × 10¹¹ 1 × 10¹² 5 × 10¹¹ monomethyl ether 92 —DETPPO 0.1 diethylene glycol 0.2 3 8 × 10¹¹ 1 × 10¹² 8 × 10¹¹ monomethylether 93 — HEDPO 0.1 acetone 5 3 9 × 10¹¹ 6 × 10¹¹ 9 × 10¹¹ 94 — PTDMP0.1 acetone 0.2 3 5 × 10¹¹ 1 × 10¹² 5 × 10¹¹ 95 — EDTA 0.1 acetonitrile5 5 8 × 10¹² 1 × 10¹³ 8 × 10¹² 96 — EDDPO 0.1 acetonitrile 0.2 3 5 ×10¹¹ 7 × 10¹¹ 8 × 10¹¹ 97 citric acid 10 EDTA 0.01 methanol 0.2 2 5 ×10¹¹ 2 × 10¹¹ 1 × 10¹¹ 98 acetic acid 5 DEPPO 5 ethanol 0.2 2 5 × 10¹¹ 1× 10¹⁰ 1 × 10¹⁰ 99 malonic acid 5 DEPPO 0.1 ethanol 0.2 3 5 × 10¹¹ 1 ×10¹⁰ 1 × 10¹⁰ 100 fumaric acid 5 DEPPO 0.1 ethanol 0.2 3 5 × 10¹¹ 1 ×10¹⁰ 1 × 10¹⁰ 101 malic acid 5 DEPPO 0.1 ethanol 0.2 3 5 × 10¹¹ 1 × 10¹⁰3 × 10¹⁰ 102 tartaric acid 5 DEPPO 0.1 ethanol 0.2 3 5 × 10¹¹ 1 × 10¹⁰ 3× 10¹⁰ 103 citric acid 20 DEPPO 5 ethanol 10 1 4 × 10¹⁰ 9 × 10¹⁰ 8 ×10¹¹ 104 citric acid 5 hexameta- 0.1 ethanol 0.2 2 4 × 10¹³ 7 × 10¹⁰ 9 ×10¹¹ phosphoric acid 105 citric acid 5 EDTPO 0.1 isopropylalcohol 0.2 21 × 10¹⁰ 4 × 10¹⁰ 2 × 10¹⁰ 106 citric acid 5 TTHA 0.01 isopropylalcohol0.2 2 1 × 10¹⁰ 5 × 10¹¹ 3 × 10¹¹ 107 citric acid 5 TETHP 0.1 ethyleneglycol 5 2 7 × 10¹¹ 8 × 10¹⁰ 2 × 10¹⁰ 108 citric acid 5 NTPO 0.1ethylene glycol 0.2 2 4 × 10¹⁰ 1 × 10¹¹ 3 × 10¹¹

Comparative Examples 96 to 108

The wafers contaminated with metals were treated in the similar way asin Examples 77 to 108 except for using various solutions described inTable 7. Thereafter, the same measurement and evaluation as in Examples77 to 108 were carried out for the wafers contaminated with metals.

The results are shown in Tables 7. TABLE 7 conc. remaining remainingremaining Comp. (% by Complexing conc. conc. Fe conc. Al conc. Cu conc.Ex. Organic acid WT) agent (% by WT) Organic solvent (% by WT) pH (Featom/cm²) (Al atom/cm²) (Cu atom/cm²) 96 — — — 7 8 × 10¹² 8 × 10¹² 1 ×10¹³ 97 — HEDEPO 0.1 — 3 5 × 10¹² 1 × 10¹³ 6 × 10¹¹ 98 citric acid 20EDTPO 5 — 1 9 × 10¹² 3 × 10¹² 1 × 10¹³ 99 citric acid 5 TTHA 0.01 — 2 7× 10¹² 5 × 10¹² 6 × 10¹² 100 citric acid 5 DEPPO 1 — 2 9 × 10¹² 9 × 10¹²7 × 10¹² 101 citric acid 5 EDTA 0.01 — 2 1 × 10¹³ 2 × 10¹² 5 × 10¹² 102citric acid 5 TETHP 0.1 — 2 5 × 10¹¹ 8 × 10¹² 6 × 10¹² 103 citric acid 5NTPO 0.1 — 2 6 × 10¹² 1 × 10¹² 1 × 10¹³ 104 citric acid 5 hexameta- 0.1— 2 8 × 10¹² 7 × 10¹² 2 × 10¹³ phosphoric acid 105 citric acid 5ammonium 1 — 2 5 × 10¹¹ 1 × 10¹³ 3 × 10¹² fluoride 106 citric acid 5ammonium 0.1 — 2 6 × 10¹¹ 2 × 10¹² 1 × 10¹⁰ fluoride 107 citric acid 5ammonium 0.2 — 2 4 × 10¹⁰ 9 × 10¹² 6 × 10¹⁰ fluoride 108 citric acid 5ammonium 0.2 — 2 3 × 10¹⁰ 4 × 10¹² 4 × 10¹⁰ fluoride

As apparent from the results of Table 6 and Table 7, it can beunderstood that amount of metals remaining on a surface of wafer can beremarkably reduced when a physical cleaning was conducted using thecleaning agent of the present invention.

Examples 109 to 140

The wafer contaminated with particles prepared by the above-describedmethod was dipped in 1 L each of cleaning agents described in Table 8,at room temperature for 5 hours. Thereafter, said wafer was taken out,rinsed with ultra pure water for 10 mins, and spin-dried.

For the wafers contaminated with particles thus treated, number ofparticles adsorbed and remaining on a surface of the wafer weremeasured, to evaluate capability of removing particles.

The results are shown in Table 8. TABLE 8 conc. Complexing conc. conc.number of particle Ex. Organic acid (% by WT) agent (% by WT) Organicsolvent (% by WT) pH (particle/wafer) 109 citric acid 5 — methanol 0.2 2500 110 acetic acid 5 — methanol 0.2 2 200 111 malonic acid 5 —isopropylalcohol 0.2 2 300 112 fumaric acid 5 — 2-methoxyethanol 0.2 2400 113 malic acid 5 — ethylene glycol 0.2 2 300 114 tartaric acid 5 —diethylene glycol 0.2 2 400 monomethyl ether 115 oxalic acid 5 — acetone0.2 2 500 116 oxalic acid 5 — acetonitrile 0.2 2 300 117 — EDTA 0.01methanol 0.2 5 200 118 — DEPPO 0.1 methanol 0.2 3 300 119 — EDTPO 0.1isopropylalcohol 0.2 3 200 120 — CyDTA 0.01 2-methoxyethanol 0.2 5 300121 — HEDPO 0.1 2-methoxyethanol 5 2 300 122 — HEDPO 0.1 ethylene glycol5 3 400 123 — DETPPO 5 diethylene glycol 0.2 2 200 monomethyl ether 124— DETPPO 0.1 diethylene glycol 0.2 3 300 monomethyl ether 125 — HEDPO0.1 acetone 0.2 3 200 126 — PTDMP 0.1 acetone 1 2 100 127 — EDTA 0.01acetonitrile 0.2 5 400 128 — EDDPO 0.1 acetonitrile 1 2 300 129 citricacid 20 EDTA 0.01 methanol 0.2 1 300 130 acetic acid 5 DEPPO 5 ethanol0.2 2 300 131 malonic acid 5 DEPPO 0.1 methanol 0.2 2 400 132 fumaricacid 5 DEPPO 0.1 ethanol 0.2 2 500 133 malic acid 5 DEPPO 0.1 ethanol0.2 2 300 134 tartaric acid 5 DEPPO 5 ethanol 0.2 2 300 135 citric acid20 DEPPO 5 ethanol 0.2 1 500 136 citric acid 10 hexameta- 0.1 ethanol0.2 2 500 phosphoric acid 137 citric acid 5 EDTPO 0.1 isopropylalcohol0.2 2 300 138 citric acid 5 TTHA 0.01 isopropylalcohol 0.2 2 500 139citric acid 5 TETHP 0.1 ethylene glycol 0.2 2 400 140 citric acid 5 NTPO0.1 ethylene glycol 0.2 2 300

Comparative Examples 109 to 121

The wafers contaminated with particles were treated in the similar wayas in Examples 109 to 140 except for using various solutions describedin Table 9. Thereafter, the same measurement and evaluation as inExamples 109 to 140 were carried out for the wafers contaminated withparticles.

The results are shown in Tables 9. TABLE 9 Comp. conc. Complexing conc.conc. number of particle Ex. Organic acid (% by WT) agent (% by WT)Organic solvent (% by WT) pH (particle/wafer) 109 — — — 7 6000 110 —HEDPO 5 — 2 200 111 citric acid 10 EDTPO 5 — 2 500 112 citric acid 5TTHA 0.01 — 2 600 113 citric acid 5 DEPPO 1 — 2 500 114 citric acid 5EDTA 0.01 — 2 300 115 citric acid 5 TETHP 0.1 — 2 400 116 citric acid 5NTPO 0.1 — 2 600 117 citric acid 5 hexameta- 0.1 — 2 400 phosphoric acid118 citric acid 10 ammonium 1 — 2 300 fluoride 119 citric acid 5ammonium 0.1 — 2 300 fluoride 120 citric acid 5 ammonium 0.2 — 2 500fluoride 121 citric acid 5 ammonium 0.2 — 2 500 fluoride

As apparent from the results of Table 8 and Table 9, it can beunderstood that use of the cleaning agent of the present invention canremove particles on a surface of wafer and the capability thereof isequivalent or better than the cleaning agent conventionally used.

As apparent from the above, it can be understood that the cleaning agentaccording to the present invention can not only well remove a carbondefect remaining on a surface of substrate, but also effectively removefine particles (particles) present on a surface of substrate as well asimpurities derived from various kinds of metals (metallic impurities) atthe same time.

1. A cleaning agent for a substrate comprising [I] an organic acidhaving at least one carboxyl group and/or [II] a complexing agent, and[III] an organic solvent selected from the group consisting of (1)monohydric alcohols, (2) alkoxyalcohols, (3) glycols, (4) glycol ethers,(5) ketones and (6) nitrites.
 2. The cleaning agent according to claim1, wherein the learning agent contains [I] the organic acid having atleast one carboxyl group and [II] the complexing agent.
 3. The cleaningagent according to claim 1, wherein the cleaning agent is an aqueoussolution.
 4. The cleaning agent according to claim 1, wherein theorganic solvent is one selected from the group consisting of methanol,ethanol, isopropyl alcohol, 2-methoxyethanol, 2-(2-butoxyethoxy)ethanol,ethylene glycol, diethylene glycol monomethyl ether, acetone andacetonitrile.
 5. The cleaning agent according to claim 1, wherein thecomplexing agent is one selected from the group consisting of a compoundhaving at least one phosphonic acid group in a molecule, and an ammoniumsalt or an alkali metal salt thereof.
 6. The cleaning agent according toclaim 5, wherein the compound having at least one phosphonic acid groupin a molecule is one selected from the group consisting ofnitrogen-containing polyphosphonic acids having 1 to 6 nitrogen atomsand 1 to 8 phosphonic acid groups in a molecule, an aryl polyphosphonicacid, an alkylene polyphosphonic acid, alkane polyphosphonic acids whichmay have a hydroxyl group, and an ammonium salt or an alkali metal saltthereof.
 7. The cleaning agent according to claim 5, wherein thecompound having at least one phosphonic acid group in a molecule is oneselected from the group consisting of nitrogen-containing polyphosphonicacids having 1 to 6 nitrogen atoms and 1 to 8 phosphonic acid groups ina molecule, alkane polyphosphonic acids which may have a hydroxyl group,and an ammonium salt or an alkali metal salt thereof.
 8. The cleaningagent according to claim 6, wherein the nitrogen-containingpolyphosphonic acids having 1 to 6 nitrogen atoms and 1 to 8 phosphonicacid groups in a molecule is one selected from the group consisting ofan alkylamino poly(alkylphosphonic acid), a mono- orpolyalkylenepolyamine poly(alkylphosphonic acid), anitrilo-poly(alkylphosphonic acid), and an ammonium salt or an alkalimetal salt thereof.
 9. The cleaning agent according to claim 1, whereinthe complexing agent is one selected from the group consisting of:ethylenediaminebis(methylenephosphonic acid) [EDDPO];ethylenediaminetetrakis(ethylenephosphonic acid);ethylenediaminetetrakis(methylenephosphonic acid) [EDTPO];hexamethylenediaminetetrakis(methylenephosphonic acid);isopropylenediaminebis(methylenephosphonic acid);isopropylenediamintetra(methylenephosphonic acid);propanediaminetetra(ethylenephosphonic acid)[PDTMP];diaminopropanetetra(methylenephosphonic acid)[PDTPO];diethylenetriaminepenta(ethylenephosphonic acid) [DEPPO];diethylenetriaminepenta(methylenephosphonic acid) [DETPPO];triethylenetetraminehexa(ethylenephosphonic acid) [TETHP];triethylenetetraminehexa(methylenephosphonic acid) [TTHPO];nitrilotris(methylenephosphonic acid)[NTPO]; ethylidenediphosphonicacid; 1-hydroxyethylidene-1,1′-diphosphonic acid [HEDPO];1-hydroxypropylidene-1,1′-diphosphonic acid; and1-hydroxybutylidene-1,1′-diphosphonic acid.
 10. The cleaning agentaccording to claim 1, wherein the organic acid is an organic acid having2 or 3 carboxyl groups.
 11. The cleaning agent according to claim 1,wherein the organic acid is a dicarboxylic acid or an oxycarboxylicacid.
 12. The cleaning agent according to claim 11, wherein theoxycarboxylic acid is an oxydicarboxylic acid or an oxytricarboxylicacid.
 13. The cleaning agent according to claim 11, wherein thedicarboxylic acid is one selected from the group consisting of an oxalicacid, a malonic acid, a succinic acid, a glutaric acid, an adipic acid,a pimelic acid, a maleic acid, a fumaric acid and a phthalic acid. 14.The cleaning agent according to claim 11, wherein the oxycarboxylic acidis a malic acid, a tartaric acid, or a citric acid.
 15. The cleaningagent according to claim 1, wherein the organic acid is a dicarboxylicacid or an oxycarboxylic acid; the complexing agent is one selected fromthe group consisting of nitrogen-containing polyphosphonic acid having 1to 6 nitrogen atoms and 1 to 8 phosphonic acid groups in a molecule,alkane polyphosphonic acids which may have a hydroxyl group, and anammonium salt or an alkali metal salt thereof; and the organic solventis one selected from the group consisting of monohydric alcohols,alkoxyalcohols, glycols, glycol ethers, ketones and nitrites.
 16. Thecleaning agent according to claim 1, wherein pH of the cleaning agent is0.5 to 6.5.
 17. The cleaning agent according to claim 1, wherein thesubstrate is a semiconductor.
 18. The cleaning agent according to claim1, wherein the substrate is one with metallic wiring provided thereon.19. The cleaning agent according to claim 18, wherein the metallicwiring is a copper wiring.
 20. The cleaning agent according to claim 1,wherein the substrate is one treated with a slurry containingbenzotriazole or a derivative thereof.
 21. A cleaning method for asurface of substrate, which comprises treating the surface of substratewith the cleaning agent according to claim
 1. 22. The cleaning methodaccording to claim 21, wherein the treatment with the cleaning agent isdipping the surface of substrate in the cleaning agent according toclaim 1 or spraying said cleaning agent on the surface of substrate. 23.The cleaning method according to claim 21, wherein physical cleaning isfurther used in combination.
 24. The cleaning method according to claim21, wherein the substrate is one after subjecting to a chemicalmechanical polishing process.
 25. The cleaning method according to claim21, wherein the substrate is a semiconductor.
 26. The cleaning methodaccording to claim 21, wherein the substrate is one with metallic wiringprovided thereon.
 27. The cleaning method according to claim 26, whereinthe metallic wiring is a copper wiring.
 28. The cleaning methodaccording to claim 21, wherein the substrate is one after subjecting tothe treatment process with a slurry containing benzotriazole or aderivative thereof.